MOSFETs | FDG330P

P 沟道，1.8V 指定，PowerTrench® MOSFET，-12 V，-2 A，110 mΩ

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概览

此 P 沟道 1.8V 指定 MOSFET 使用安森美半导体先进的低压 PowerTrench 工艺。此产品非常适用于电池功率管理应用。

  • This product is general usage and suitable for many different applications.
  • -2 A，-12V
  • RDS(ON) = 110 mΩ @ VGS = 4.5V
  • RDS(ON) = 150 mΩ @ VGS = 2.5V
  • RDS(ON) = 215 mΩ @ VGS = 1.8V
  • 低栅极电荷
  • 高性能沟道技术可实现极低的rDS(on)
  • 紧凑的工业标准SC70-6表面贴装封装

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDG330P

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Obsolete

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419AD

1

260

REEL

3000

N

-12

-

P-Channel

Single

8

-1.5

-2

0.75

150

110

5.1

5

477

Price N/A

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