FDG6318PZ

双 P 沟道，PowerTrench® MOSFET，-20 V，-0.5 A，307 mΩ

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CAD模型

概览

此类双 P 沟道逻辑电平增强模式 MOSFET 专用于最大程度降低导通电阻。此器件专用于双极数字晶体管和小信号 MOSFET。

应用

This product is general usage and suitable for many different applications.

特性

-0.5A，-20V
R_DS(ON) = 780 mΩ @ V_GS = -4.5V
R_DS(ON) = 1200 mΩ @ V_GS = -2.5V
极低电平的栅极驱动要求允许直接在3V电路中运行(V_GS(TH)< 1.5V)。
栅-源齐纳二极管可增强耐静电放电能力（>1.4kV人体模型）。
紧凑的工业标准SC-70-6表面贴装封装。

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDG6318PZ

Last Shipments

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

260

REEL

3000

-20

P-Channel

Dual

-1.5

-0.5

0.3

Q1=Q2=1200

Q1=Q2=780

0.67

85.4

Price N/A

产品型号:

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MOSFETs | FDG6318PZ

双 P 沟道，PowerTrench® MOSFET，-20 V，-0.5 A，307 mΩ

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