MOSFETs | FDMA3027PZ

双 P 沟道，Power Trench® MOSFET，-30V，-3.3A，87mΩ

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概览

此器件专门设计为双开关要求的单封装解决方案，如用于更大 MOSFET 的门极驱动器。它具有两个独立的 P 沟道 MOSFET，且均具有低导通电阻，可实现最低的导电损耗。MicroFET 2x2 封装对于其物理尺寸来说提供了卓越的热性能，非常适合线性模式应用。增加了 G-S 齐纳以提高 ESD 电压水平。

  • 配电
  • Max rDS(on) = 87 mΩ at VGS = -10 V, ID = -3.3 A
  • Max rDS(on) = 152 mΩ at VGS = -4.5 V, ID = -2.3 A
  • HBM ESD protection level > 2 KV typical (Note 3)
  • Low profile - 0.8 mm maximum - in the new packageMicroFET 2x2 mm
  • RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMA3027PZ

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Obsolete

CAD Model

Pb

A

H

P

WDFN-6

511DA

1

260

REEL

3000

N

-30

Q1=Q2=87

P-Channel

Dual

25

-3

-3.3

1.4

-

Q1=Q2=152

12

4.1

324

Price N/A

More Details

FDMA3027PZ-F130

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Last Shipments

CAD Model

Pb

A

H

P

WDFN-6

511DA

1

260

REEL

3000

N

-30

Q1=Q2=87

P-Channel

Dual

25

-3

-3.3

1.4

-

Q1=Q2=152

12

4.1

324

Price N/A

More Details

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