MOSFETs | FDMB2308PZ

双共漏极 P 沟道 PowerTrench® MOSFET -20V，-7A，36mΩ

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概览

此器件专门设计用作锂离子电池组保护电路和其他超便携应用中的单封装方案。它具有两个共漏极 P 沟道 MOSFET，可实现双向电流流向，基于安森美半导体先进的 PowerTrench® 工艺以及最新的 MicroFET 引线框架，FDMB2308PZ 可最大程度减小 PCB 空间和 rS1S2(on)。

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  • 最大值 rS1S2(on) = 36 mΩ（VGS = -4.5 V且ID = -5.7 A
    时）
  • 最大值 rS1S2(on) = 50 mΩ（VGS = -2.5 V且ID = -4.6 A
    时）
  • 薄型 – 最大0.8mm – 采用新的MicroFET 2x3 mm封装
  • HBM静电放电保护等级为2.8kV（注3）
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMB2308PZ

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Active

CAD Model

Pb

A

H

P

WDFN-6

511CX

1

260

REEL

3000

N

-20

-

P-Channel

Dual

12

-1.5

-7

2.2

Q1=Q2=50

Q1=Q2=36

7

22

2280

$0.7786

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