MOSFETs | FDMC2512SDC

N 沟道，双 CoolTM 33 PowerTrench® SyncFETTM，25V，40A，2.0mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的。同时结合了硅和 Dual Cool™ 封装技术的发展，可提供最低的 rDS(on)，因为具有极低的结到环境热阻，同时可保持卓越的开关性能。此器件还增加了高效单片肖特基体二极管的优点。

  • This product is general usage and suitable for many different applications.
  • Dual Cool™顶侧冷却PQFN封装
  • VGS = 10 V，ID = 27 A时，最大rDS(on) = 2.0mΩ
  • VGS = 4.5 V，ID = 22 A时，rDS(on)
    = 2.95 mΩ（最大值）
  • 通态电阻 rDS(on)
    极低的高性能技术
  • SyncFET肖特基体二极管
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC2512SDC

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

483AL

1

260

REEL

3000

N

25

Q1=Q2=2

N-Channel

Single

20

3

40

66

-

Q1=Q2=2.95

-

22

3315

Price N/A

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