FDMC3020DC

N 沟道，双 CoolTM 33 PowerTrench® MOSFET，30V，40A，6.25mΩ

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CAD模型

概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的。同时结合了硅和 Dual Cool™ 封装技术的发展，可提供最低的 rDS(on)，因为具有极低的结到环境热阻，同时可保持卓越的开关性能。此器件还增加了高效单片肖特基体二极管的优点。

应用

This product is general usage and suitable for many different applications.

特性

Dual Cool™ 顶侧冷却PQFN封装
V_GS = 10 V，I_D = 12 时，最大r_DS(on) = 6.25 mΩ
V_GS= 4.5 V，I_D = 10 A时，最大r_DS(on) = 9.0mΩ
通态电阻 r_DS(on)极低的高性能技术
符合 RoHS 标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMC3020DC

Last Shipments

PQFN-8

483AL

260

REEL

3000

Q1=Q2=6.25

N-Channel

Single

Q1=Q2=9

7.1

1038

Price N/A

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MOSFETs | FDMC3020DC

N 沟道，双 CoolTM 33 PowerTrench® MOSFET，30V，40A，6.25mΩ

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