FDMC5614P

P 沟道 Power Trench® MOSFET -60V，-13.5A，100mΩ

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概览

此 P 沟道 MOSFET 是先进的 Power Trench 工艺的坚固门极版本。它适用于需要较宽范围的门极驱动电压额定值 (4.5V–20V) 的电源管理应用。

应用

This product is general usage and suitable for many different applications.

特性

V_GS= -10 V，I_D = -5.7A时，最大r_DS(on) = 100mΩ
V_GS= -4.5 V，I_D = -4.4A时，最大r_DS(on) = 135mΩ
低栅极电荷
快速开关速度
高性能沟道技术可实现极低的 r_DS(on)
高功率和高电流处理能力
符合 RoHS 标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMC5614P

Last Shipments

WDFN-8

511DR

260

REEL

3000

-60

100

P-Channel

Single

±20

-3

-13.5

135

795

Price N/A

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MOSFETs | FDMC5614P

P 沟道 Power Trench® MOSFET -60V，-13.5A，100mΩ

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