MOSFETs | FDMC86340

N 沟道屏蔽门极 Power Trench® MOSFET 80V，48A，6.5mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，该工艺结合了屏蔽门极技术。此工艺经过了优化，可最大程度降低导通电阻，同时可保持出色的开关性能。

  • DC-DC商用电源
  • • 屏蔽栅极 MOSFET 技术
  • rDS(on)最大值 = 6.5 mΩ（VGS = 10 V、ID = 14 A）
  • rDS(on)最大值 = 8.5 mΩ（VGS = 8 V、ID = 12 A）
  • 高性能技术可实现极低的 rDS(on)
  • 终端为无铅产品
  • 符合 RoHS 标准

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC86340

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AW

1

260

REEL

3000

Y

80

6.5

N-Channel

Single

±20

4

48

54

-

-

-

31

2775

$0.7475

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