MOSFETs | FDMD82100L

双 N 沟道，PowerTrench® MOSFET，100V，24A，19.5mΩ

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概览

此器件在一个双 Power (3.3 mm X 5 mm) 封装中包括了两个 100V N 沟道 MOSFET。针对半桥/全桥内部联接的 HS 源和 LS 漏极，低源电感封装，低 rDS(on)/Qg FOM 硅。

  • This product is general usage and suitable for many different applications.
  • 最大 rDS(on)=19.5 mΩ（VGS = 10 V、ID = 7 A时）
  • 最大 rDS(on)=30 mΩ（VGS = 4.5 V、ID = 5.7 A时）
  • 是实现桥式拓扑初级端灵活布局的理想选择
  • 终端无引线且符合 RoHS 标准
  • 100% 经过 UIL 测试
  • 开尔文高侧 MOSFET 驱动引脚排列能力

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMD82100L

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Last Shipments

CAD Model

Pb

A

H

P

PQFN-12

483BN

1

260

REEL

3000

N

100

Q1=Q2=19.5

N-Channel

Dual

±20

3

24

38

-

Q1=Q2=30

-

8

1130

Price N/A

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