Dual N-Channel PowerTrench® MOSFET, 30V, 28A, 2.12mΩ

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概览

This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. It provides a very small footprint (3.3 x 5 mm) for higher power density.

  • Isolated DC−DC Synchronous Rectifiers
  • Common Ground Load Switches
  • Max rDS(on) = 2.12 mΩ at VGS = 10 V, ID = 28 A
  • Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 24 A
  • Ideal for Flexible Layout in Secondary Side Synchronous Rectification
  • 100% UIL Tested
  • Termination is Lead-free and RoHS compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMD8430

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

30

Q1=Q2=2.12

N-Channel

Dual

±20

3

95

29

-

Q1=Q2=2.95

25

52

3595

Price N/A

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