FDMD85100

双 N 沟道，PowerTrench® MOSFET，100V，48A，9.9mΩ

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CAD模型

概览

此器件包括了两个 100V N 沟道 MOSFET，采用双 Power (5 mm X 6 mm) 封装。针对半桥/全桥内部联接的 HS 源和 LS 漏极，低源电感封装，低 rDS(on)/Qg FOM 硅。

应用

This product is general usage and suitable for many different applications.

特性

Q1： N-沟道
最大值 r_DS(on) = 16.4 mΩ（V_GS = 6 V、I_D = 8 A
）Q2： N-沟道
是实现桥式拓扑初级端灵活布局的理想选择
终端无引线且符合 RoHS 标准
100% 经过 UIL 测试
开尔文高侧 MOSFET 驱动引脚排列能力

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMD85100

Last Shipments

PQFN-8

483AT

260

REEL

3000

100

Q1=Q2=9.9

N-Channel

Dual

±20

Q1=Q2: 48.0

9.2

13.5

Q1=1590, Q2:1485

Price N/A

产品型号:

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MOSFETs | FDMD85100

双 N 沟道，PowerTrench® MOSFET，100V，48A，9.9mΩ

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