MOSFETs | FDMD8560L

N 沟道 Power Trench® MOSFET 60V，22A，3.2mΩ

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概览

此器件采用双 Power (5 mm X 6 mm) 封装，包含两个 60V N 沟道 MOSFET。针对半桥/全桥内部连接的 HS 源和 LS 漏极，低源电感封装，低 rDS(on)/Qg FOM 硅。

  • This product is general usage and suitable for many different applications.
  • Q1： N沟道
  • 最大 rDS(on) = 5.4 mΩ（VGS = 4.5 V、ID = 18 A
    ）Q2： N沟道
  • 桥式拓扑初级端灵活布局的理想选择
  • 100% 经过 UIL 测试
  • 开尔文高侧 MOSFET 驱动引脚配置能力
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMD8560L

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Last Shipments

CAD Model

Pb

A

H

P

PQFN-8

483AT

1

260

REEL

3000

N

60

Q1=Q2=3.2

N-Channel

Dual

±20

3

Q1=Q2= 22.0

48

-

Q1=Q2=5.4

-

2.5

Q1=Q2=7420

Price N/A

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