MOSFETs | FDMD8580

双 N 沟道 PowerTrench® MOSFET 80 V，82A，4.6 mΩ

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概览

此器件采用双 Power (5 mm X 6 mm) 封装，包含两个 80V N 沟道 MOSFET。针对半桥/全桥内部连接的 HS 源和 LS 漏极，低源电感封装，低 rDS(on) / Qg FOM 硅。

  • This product is general usage and suitable for many different applications.
  • Q1： N沟道最大 rDS(on) = 4.6 mΩ（VGS = 10 V、ID = 16 A
    ）
  • 最大 rDS(on) = 6.0 mΩ（V
    = 8 V、ID = 14 A
    ）Q2： N沟道
  • 是实现桥式拓扑初级侧灵活布局的理想选择
  • 100% 经过 UIL 测试
  • 开尔文高侧 MOSFET 驱动引脚排列能力
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMD8580

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Last Shipments

CAD Model

Pb

A

H

P

PQFN-8

483AT

1

260

REEL

3000

N

80

6

N-Channel

Dual

±20

4.5

Q1=Q2= 82.0

59

-

6

-

57

Q1=Q2=4195

Price N/A

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