MOSFETs | FDMD8680

双 N 沟道，PowerTrench® MOSFET，60V，66A，4.7mΩ

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概览

此封装在共源配置中集成了两个内部连接的 N 沟道器件。因此实现了极低的封装寄生，以及通向底部共源片的优化热路径。提供了极小的占地面积 (5 x 6 mm)，实现了更高的功率密度。

  • This product is general usage and suitable for many different applications.
  • Common source configuration to Eliminate PCB Routing
  • Large Source Pad on Bottom of Package for Enhanced Thermals
  • Max rDS(on) = 4.7 mΩ at VGS = = 10 V, ID = 16 A
  • Max rDS(on) = 6.4 mΩ at VGS = = 8 V, ID = 14 A
  • Ideal for Flexible Layout in Secondary Side Synchronous Rectification
  • 100% UIL Tested
  • Termination is Lead-free and RoHS Compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMD8680

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Lifetime

CAD Model

Pb

A

H

P

PQFN-8

483AS

1

260

REEL

3000

N

80

Q1=Q2=4.7

N-Channel

Dual

±20

4

66

39

-

-

-

53

3805

$1.6308

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