MOSFETs | FDMD8900

N 沟道，PowerTrench® MOSFET，30V

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CAD Model

CAD模型

概览

此器件在双 3.3x5mm 热增强功率封装中使用了两个优化的 N 沟道 FET。HS 源极和 LS 漏极内部联接，提供了低源极阻抗，有助于提供最佳 FOM。

  • This product is general usage and suitable for many different applications.
  • Q1：N沟道
  • 最大 rDS(on) = 8.3 mΩ（VGS = 3.5 V、ID = 14 A
    ）Q2：N沟道
  • 是实现桥式拓扑初级侧灵活布局的理想选择
  • 终端无引线且符合 RoHS 标准
  • 100% 经过 UIL 测试
  • 开尔文高侧 MOSFET 驱动引脚排列能力

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMD8900

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Obsolete

CAD Model

Pb

A

H

P

PQFN-12

483BN

1

260

REEL

3000

N

30

Q1: 4, Q2: 5.5

N-Channel

Dual

12

2.5

Q1:66.0, Q2: 42.0

Q1: 27, Q2: 15

-

Q1: 5, Q2: 6.5

-

8.8

1210

Price N/A

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