MOSFETs | FDMS001N025DSD

25 V，不对称双 N 沟道，PowerTrench® Power Clip MOSFET

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概览

此器件 在一个 双封装中 包括了 两 个特制的 N 沟道 MOSFET。开关节点已经内部联接， 可实现 同步降 压 转换器 的轻松布 置和布线 。 控制 MOSFET (Q1) 和同步 SyncFET (Q2) 可 提供最佳 功率 能效。

  • DC-DC Buck Converter
  • Computing
  • Communications / Telecom
  • Datacom
  • DC-DC Point of Load
  • Q1: N−Channel
     MAX rDS(on) = 3.25 mΩ at VGS = 10 V, ID = 19 A
     MAX rDS(on) = 4 mΩ at VGS = 4.5 V, ID = 17 A
  • Q2: N−Channel
     Max rDS(on) = 0.92 mΩ at VGS = 10 V, ID = 38 A
     MAX rDS(on) = 1.20 mΩ at VGS = 4.5 V, ID = 34 A
  • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses
  • MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing
  • RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS001N025DSD

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

483AR

1

260

REEL

3000

N

25

Q1 = 3.25 ; Q2 = 0.92

N-Channel

Dual

16

3

Q1 = 69 ; Q2 = 165

Q1 = 26 ; Q2 = 42

-

Q1 = 4 ; Q2 = 1.2

Q1 = 9.7 ; Q2 = 35

Q1 = 21 ; Q2 = 75

Q1 = 1370 ; Q2 = 5105

Price N/A

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