MOSFETs | FDMS3610S

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该器件在双PQFN封装中包括两个专用N沟道MOSFET。 该开关节点通过内部连接，能够为同步降压转换器提供简单的布局和布线。 控制MOSFET (Q1)和同步SyncFET (Q2)旨在提供优化的功效。

  • 服务器
  • Q1： N沟道
  • 最大值 rDS(on) = 5.7 mΩ（VGS = 4.5 V, ID = 16 A
    时）Q2： N沟道
  • 低电感封装缩短了上升/下降时间，从而减少了开关损耗
  • MOSFET集成可实现降低电路电感以及开关节点振铃噪声的优化布局
  • 符合RoHS标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS3610S

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

483AJ

1

260

REEL

3000

N

25

Q1: 5, Q2: 1.8

N-Channel

Dual

12

Q1: 2.0, Q2: 2.2

Q1: 17.5, Q2: 30.0

Q1:2.2, Q2: 2.5

-

Q1: 5.7, Q2: 2.2

50

27

4045

Price N/A

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