MOSFETs | FDMS3622S

25V PowerTrench®功率级25V非对称双N沟道MOSFET

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概览

该器件在双PQFN封装中包括两个专用N沟道MOSFET。 该开关节点通过内部连接，能够为同步降压转换器提供简单的布局和布线。 控制MOSFET (Q1)和同步SyncFET (Q2)旨在提供优化的功效。

  • 服务器
  • Computing
  • General Purpose Point of Load
  • Notebook VCORE
  • Q1: N-Channel
    Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A
    Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A
  • Q2: N-Channel
    Max rDS(on) = 1.4 mΩ at VGS = 10 V, ID = 34 A
    Max rDS(on) = 1.6 mΩ at VGS = 4.5 V, ID = 32 A
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
  • RoHS Compliant

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS3622S

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

483AJ

1

260

REEL

3000

N

25

Q1: 5.0, Q2: 1.4

N-Channel

Dual

12

Q1: 2.0, Q2: 2.2

Q1: 17.5, Q2: 34.0

Q1:2.2, Q2: 2.5

-

Q1: 5.7, Q2: 1.6

19

40

5565

Price N/A

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