MOSFETs | FDMS3660AS

不对称双 N 沟道，PowerTrench® 功率级 MOSFET，30V

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CAD模型

概览

此器件在一个双 PQFN 封装中包括了两个特制的 N 沟道 MOSFET。开关节点已经内部联接，可实现同步降压转换器的轻松布置和布线。控制 MOSFET (Q1) 和同步 SyncFET™ (Q2) 可提供最佳功率能效。

  • Computing
  • Communications
  • General Purpose Point of Load
  • • Q1： N 沟道
  • rDS(on)最大值 = 11 mΩ，需 VGS = 4.5 V、ID = 11 A
    • Q2： N 沟道
  • rDS(on)最大值 = 1.8 mΩ，需 VGS = 10 V、ID = 30 A
  • rDS(on)最大值 = 2.2 mΩ，需 VGS = 4.5 V、ID = 27 A
    • 低电感封装缩短了上升/下降时间，从而减少了开关损耗
    • MOSFET集成可实现降低电路电感以及开关节点振铃噪声的优化布局
    • 符合 RoHS 标准
  • RoHS Compliant

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS3660AS

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

483AJ

1

260

REEL

3000

N

30

Q1: 8, Q2: 1.8

N-Channel

Dual

12

Q1: 2.7, Q2: 2.5

Q1: 13.0, Q2: 30.0

Q1:2.2, Q2: 2.5

-

Q1: 11.0, Q2: 2.2

-

30

4150

Price N/A

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