MOSFETs | FDMS3668S

不对称双 N 沟道，PowerTrench® 功率级 MOSFET，30V

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概览

此器件在一个双 PQFN 封装中包括了两个特制的 N 沟道 MOSFET。开关节点已经内部联接，可实现同步降压转换器的轻松布置和布线。控制 MOSFET (Q1) 和同步 SyncFET (Q2) 可提供最佳功率能效。

  • 笔记本电脑
  • Q1: N-Channel
    Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
    Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
  • Q2: N-Channel
    Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A
    Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switching node ringing
  • RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS3668S

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

483AJ

1

260

REEL

3000

N

30

Q1: 8, Q2: 5

N-Channel

Dual

12

Q1: 2.7, Q2; 2.2

Q1: 13.0, Q2: 18.0

Q1:2.2, Q2: 2.5

-

Q1: 11.0, Q2: 5.2

-

12

1935

Price N/A

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