FDMS8020

N 沟道，PowerTrench® MOSFET，30V，131A，2.5mΩ

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概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总能效以及最大程度降低其开关节点噪声而设计，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。它经过了优化，可实现低门极电荷、低 RDS(ON)、快速开关和体二极管逆向恢复功能。

应用

消费电子

特性

Max r_DS(on) = 2.5 mΩ at V_GS = 10V, I_D = 26 A
Max r_DS(on) = 3.6 mΩ at V_GS = 4.5V, I_D = 21.5 A
Advanced Package and Silicon combination for low r_DS(on) and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMS8020

Last Shipments

PQFN-8

483AE

260

REEL

3000

2.5

N-Channel

Single

131

3.6

2855

Price N/A

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MOSFETs | FDMS8020

N 沟道，PowerTrench® MOSFET，30V，131A，2.5mΩ

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