FDMS8558SDC

25V N沟道PowerTrench® SyncFET™

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CAD模型

概览

此 N 沟道 SyncFET™ 采用飞兆半导体先进的 PowerTrench^®工艺生产。先进的硅技术和封装技术完美融合，可在提供最小 r_DS(on)的同时通过极低的结至环境热阻保持卓越的开关性能。该器件具有高效单片肖特基体二极管的新增优点。

应用

发电和配电

特性

Dual Cool™ PQFN package
Max r_DS(on) = 1.5 mΩ at V_GS = 10 V, I_D = 38 A
Max r_DS(on) = 1.7 mΩ at V_GS = 4.5 V, I_D = 36 A
High performance technology for extremely low r_DS(on)
SyncFET™ Schottky Body Diode
RoHS Compliant

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMS8558SDC

Obsolete

PQFN-8

483BK

260

REEL

3000

1.5

N-Channel

Single

2.2

1.7

5118

Price N/A

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MOSFETs | FDMS8558SDC

25V N沟道PowerTrench® SyncFET™

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