FDP12N50

N 沟道 UniFET^TM MOSFET 500V，11.5A，650mΩ

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CAD模型

概览

UniFET^TM MOSFET 是飞兆半导体^®的高压 MOSFET 系列产品，基于平面条形和 DMOS 技术。该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。该器件系列适用于开关电源转换器应用，如功率因数校正（PFC）、平板显示器（FPD）电视电源、ATX 及照明设备用镇流器。

应用

This product is general usage and suitable for many different applications.
Lighting
Uninterruptible Power Supplies
LCD / LED / PDP TV

特性

R_DS(on) = 550mΩ （典型值）@ V_GS = 10V, I_D = 6A
低栅极电荷（典型值 22nC）
低 C_rss（典型值 11pF）
100% 经过雪崩击穿测试
符合 RoHS 标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDP12N50

Last Shipments

TO-220-3

340AT

TUBE

1000

500

650

N-Channel

Single

±30

11.5

165

985

Price N/A

产品型号:

分销代理商		Stock	BUY

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MOSFETs | FDP12N50

N 沟道 UniFETTM MOSFET 500V，11.5A，650mΩ

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N 沟道 UniFET^TM MOSFET 500V，11.5A，650mΩ