FDP65N06

功率 MOSFET，N 沟道，UniFETTM，60 V，65 A，16 mΩ，TO-220

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CAD模型

概览

UniFETTM MOSFET 是基于平面条纹和 DMOS 工艺的高压 MOSFET 系列。此 MOSFET 适用于降低导通电阻，提供更佳的开关性能以及更高的雪崩能量强度。此器件系列适用于开关电力转换器应用，如功率因数校正 (PFC)、平板显示屏 (FPD) TV 电源、ATX 和电子灯镇流器。

应用

其他工业
Power Factor Correction
ATX and Electronic Lamp Ballasts
Flat Pannel Display TV Power

特性

R_DS(on) = 13mΩ (Max.)@ V_GS = 10V, I_D = 32.5A
Low gate charge (Typ. 33nC)
Low C_rss (Typ. 35pF)
Fast Switching Speed
Improved dv/dt Capability

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDP65N06

Last Shipments

TO-220-3

340AT

TUBE

1000

N-Channel

Single

±20

135

1670

Price N/A

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MOSFETs | FDP65N06

功率 MOSFET，N 沟道，UniFETTM，60 V，65 A，16 mΩ，TO-220

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