MOSFETs | FDPC4044

共漏极，N 沟道，PowerTrench® MOSFET，30V，27A，4.3mΩ

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CAD Model

CAD模型

概览

此器件专门设计为锂电子电池组保护电路和其他超便携应用中的单封装解决方案。它具有两个共漏极 N 沟道 MOSFET，可实现双向电流流动。FDPC4044 将安森美半导体先进的 PowerTrench® 工艺与封装工艺相结合，可最大程度降低导通电阻。

  • 笔记本电脑
  • Battery Management
  • Load Switch
  • Battery Protection
  • rS1S2(on)最大值 = 4.3 mΩ（VGS = 10 V、IS1S2 = 27 A）
  • rS1S2(on)最大值 = 6.4 mΩ（VGS = 4.5 V、IS1S2 = 23 A）
  • 封装尺寸/高度： 3.3 x 3.3 x 0.8 mm
  • 低电感封装缩短了上升/下降时间，从而减少了开关损耗
  • MOSFET集成可实现降低电路电感以及开关节点振铃噪声的优化布局
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDPC4044

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

483BP

1

260

REEL

3000

N

30

Q1=Q2=4.3

N-Channel

Dual

20

3

27

2.7

-

Q1=Q2=6.4

18

35

2295

Price N/A

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