MOSFETs | FDPF8N50NZU

功率 MOSFET，N 沟道，UniFETTM II，Ultra FRFETTM，500 V，6.5 A，1.2 Ω，TO-220F

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UniFETTM II MOSFET 是基于先进的平面条纹和 DMOS 工艺的高压 MOSFET 系列。此先进的 MOSFET 系列在平面 MOSFET 中具有最小的导通电阻，同时可提供卓越的开关性能和更高的雪崩能量强度。另外，内部门极电源 ESD 二极管使得 UniFET II MOSFET 可承受 2kV 以上的 HBM 电涌应力。UniFET II Ultra FRFETTM MOSFET 具有卓越的体二极管逆向恢复性能。其 trr 小于 50nsec，逆向 dv/dt 抗扰度为 20V/nsec，而普通 MOSFET 的这两个指标分别为 200nsec 和 4.5V/nsec 以上。因此，需要 MOSFET 体二极管性能提高的某些应用中，UniFET II Ultra FRFET MOSFET 可以消除附加组件，提高系统可靠性。此器件系列适用于开关电力转换器应用，如功率因数校正 (PFC)、平板显示屏 (FPD) TV 电源、ATX 和电子灯镇流器。

  • This product is general usage and suitable for many different applications.
  • LCD / LED / PDP TV
  • Lighting
  • Uninterruptible Power Supplies
  • AC-DC Power Supplies
  • RDS(on) = 1.0Ω （典型值）@ VGS = 10V, ID = 3.25A栅极电荷低（典型值：14nC)
  • 低 Crss（典型值5pF)
  • 100% 经过雪崩击穿测试
  • 提高了 dv/dt 性能
  • 改进了 ESD 防护能力
  • 符合 RoHS 标准
  • RoHS compliant

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MSL Temp (°C)

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ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

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FDPF8N50NZU

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

N

500

1200

N-Channel

Single

±25

5

6.5

40

-

-

-

14

565

Price N/A

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