MOSFETs | FDS4675_F085

P 沟道 PowerTrench® MOSFET -40V，-11A，13mΩ

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CAD Model

CAD模型

概览

此 P 沟道 MOSFET 是先进的 PowerTrench 工艺的坚固门极版本。它针对需要较宽门极驱动电压额定值 (4.5V – 20V) 的电源管理应用进行了优化。

  • 信息娱乐
  • 便携导航
  • 传动系
  • 安全和控制
  • 舒适与便捷
  • 人体电子
  • 车辆安全系统
  • 其他车用
  • 其他
  • Power Management
  • Load Switch
  • Battery Protection
  • –11 A，–40 V，RDS(ON) = 0.013 Ω（VGS = –10 V 时），RDS(ON) = 0.017 Ω（VGS = –4.5 V 时）
  • 快速开关速度
  • 高性能沟道技术可实现极低的RDS(ON)
  • 高功率和高电流处理能力
  • 符合 AEC Q101 标准
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS4675-F085

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

-40

13

P-Channel

Single

±20

-3

-11

2.4

-

17

-

40

4350

Price N/A

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