FDS4897AC

双 N 和 P 沟道，PowerTrench® MOSFET，40V

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数据表

CAD模型

概览

此类双 N 和 P 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的开关性能。

应用

This product is general usage and suitable for many different applications.
Inverter
Power Supplies

特性

Q1： N沟道
最大值 R_DS(on) = 26mΩ（V_GS = 10V，I_D = 6.1A）
最大值 R_DS(on) = 31mΩ（V_GS = 4.5V，I_D = 5.6A）Q2： P沟道
最大值 R_DS(on) = 39mΩ（V_GS = -10V，I_D = -5.2A）

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS4897AC

Last Shipments

SOIC-8

751EB

260

REEL

2500

±40

N:26.0,P:39.0

Complementary

Dual

±20

±3

N: 6.1, P: -5.2

N:31.0,P:65.0

N: 796, P: 765

Price N/A

产品型号:

分销代理商		Stock	BUY

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MOSFETs | FDS4897AC

双 N 和 P 沟道，PowerTrench® MOSFET，40V

概览

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