MOSFETs | FDS6630A

N 沟道，逻辑电平，PowerTrenchTM MOSFET，30V，6.5A，38mΩ

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概览

此 N 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench 工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的开关性能。此类器件非常适用于要求线内低功率损耗和快速开关的低压和电池供电应用。

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Load Switch
  • Motor Drives
  • 6.5 A，30 V。 RDS(on) = 0.038 Ω@ VGS = 10 V，RDS(on) = 0.053 Ω @ VGS = 4.5 V
  • 低栅极电荷（典型值5 nC）。
  • 开关速度快。
  • 高性能沟道技术可实现极低的RDS(ON)。
  • 高功率和高电流处理能力。

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS6630A

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

30

38

N-Channel

Single

20

3

6.5

2.5

-

53

16

5

460

Price N/A

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