FDS6670AS

N 沟道，PowerTrench® SyncFET™，30V，13.5A，9.0mΩ

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CAD模型

概览

FDS6670AS 专为替代同步 DC:DC 电源中的单 SO-8 MOSFET 和肖基特二极管而设计。此 30V MOSFET 适用于最大程度提高电源转换能效，可提供低 RDS(ON) 和低门极电荷。FDS6670AS 包括了一个使用安森美半导体单片 SyncFET 技术的集成式肖基特二极管。

应用

This product is general usage and suitable for many different applications.
DC/DC Converters
Low Side Notebook

特性

13.5A，30V R_DS(on) = 9.0 mΩ @ V_GS = 10V
R_DS(on) = 11.5mΩ @ V_GS = 4.5V
包含SyncFET肖特基体二极管
低栅极电荷（27nC典型值）
高性能沟道技术可实现极低的R_DS(ON)和快速开关
高功率和高电流处理能力
符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS6670AS

Last Shipments

SOIC-8

751EB

260

REEL

2500

N-Channel

Single

13.5

2.5

11.5

1540

Price N/A

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MOSFETs | FDS6670AS

N 沟道，PowerTrench® SyncFET™，30V，13.5A，9.0mΩ

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