MOSFETs | FDS6673BZ_F085

P 沟道，PowerTrench® MOSFET，-30V，-14.5A，7.8mΩ

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概览

此 P 沟道 MOSFET 是使用先进的 Power Trench 工艺生产的，特别适用于最大程度降低导通电阻。此器件适用于笔记本电脑和便携式电池组中常见的电源管理和负载开关应用。

  • 信息娱乐
  • 便携导航
  • 其他
  • 传动系
  • 安全和控制
  • 舒适与便捷
  • 人体电子
  • 车辆安全系统
  • 其他车用
  • 最大 rDS(on) = 7.8 mΩ、VGS = -10 V、ID = -14.5 A
  • Max rDS(on) = 12mΩ，VGS = -4.5V，ID = -12A
  • 扩展了VGS范围(-25V)，适合电池应用
  • HBM静电放电保护等级，典型值为6.5KV（注3）
  • 高性能沟道技术可实现极低的 rDS(on)
  • 高功率和高电流处理能力
  • 符合 RoHS 标准
  • 符合 AEC Q101

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS6673BZ-F085

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

-30

7.8

P-Channel

Single

25

-3

-14.5

2.5

-

12

25

88

3500

Price N/A

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