MOSFETs | FDS6685

P 沟道 PowerTrench® MOSFET -30V，-8.8A，20mΩ

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概览

此 P 沟道 MOSFET 是先进的 PowerTrench 工艺的坚固门极版本。它针对需要各种门极驱动电压额定值 (4.5V – 25V) 的电源管理应用进行了优化。

  • TBA
  • Load Switch
  • Battery Protection
  • –8.8 A, –30 V
    RDS(ON) = 20 mΩ @ VGS = –10 V
    RDS(ON) = 35 mΩ @ VGS = –4.5 V
  • Low gate charge (17nC typical)
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS6685-NBCM003A

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

-30

20

P-Channel

Single

±25

-3

-8.8

2.5

-

35

17

-

1604

Price N/A

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