FDS6692A

30V N沟道PowerTrench® MOSFET

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CAD模型

概览

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。已针对低栅极电荷、低r_DS(ON) 和高速开关进行了优化。

应用

This product is general usage and suitable for many different applications.
DC/DC Converters

特性

R_DS(ON) = 11.5mΩ，V_GS = 10V，I_D = 9A
R_DS(ON) = 14.5mΩ，V_GS = 4.5V，I_D = 8.2A
高性能沟道技术可实现极低的R_DS(on)
低栅极电荷
高功率和高电流处理能力
符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS6692A

Obsolete

SOIC-8

751EB

260

REEL

2500

11.5

N-Channel

Single

2.5

1.47

14.5

1210

Price N/A

产品型号:

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MOSFETs | FDS6692A

30V N沟道PowerTrench® MOSFET

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