FDS6892A

双N沟道逻辑电平PWM优化PowerTrench® MOSFET

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CAD模型

概览

这些N沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。

应用

This product is general usage and suitable for many different applications.

特性

7.5 A, 20 V
R_DS(ON) = 18 mΩ @ V_GS = 4.5 V
R_DS(ON) = 24 mΩ @ V_GS = 2.5 V
低栅极电荷
高性能沟道技术可实现极低的R_DS(ON)
高功率和高电流处理能力

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS6892A

Obsolete

SOIC-8

751EB

260

REEL

2500

N-Channel

Dual

1.5

7.5

Q1=Q2=24

Q1=Q2=18

1333

Price N/A

产品型号:

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MOSFETs | FDS6892A

双N沟道逻辑电平PWM优化PowerTrench® MOSFET

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