MOSFETs | FDS6898AZ_F085

20 V、9.4 A、10 mΩ、SO-8，逻辑电平
双通道 N 沟道 PowerTrench®

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概览

这些N沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。

  • 信息娱乐
  • 便携导航
  • 信息娱乐
  • 其他
  • 传动系
  • 安全和控制
  • 舒适与便捷
  • 人体电子
  • 车辆安全系统
  • 其他车用
  • 9.4 A、20 V、RDS(ON) = 14 mΩ（VGS = 4.5 V）
  • 低栅极电荷（16nC，典型值）
  • 静电放电(ESD)保护二极管（注3）
  • 高性能沟道技术可实现极低的RDS(ON)
  • 高功率和高电流处理能力
  • 符合 AEC Q101 标准
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS6898AZ-F085

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

20

-

N-Channel

Dual

12

1.5

9.4

2

Q1=Q2=18

Q1=Q2=14

9

16

1821

Price N/A

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