MOSFETs | FDS8876

N 沟道，PowerTrench® MOSFET，30V，12.5A，8.5mΩ

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概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总能效而设计，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。它经过了优化，可实现低门极电荷、低 RDS(ON) 和快速开关。

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • RDS(ON) = 8.2 mΩ @ VGS = 10V @ ID = 12.5A
  • RDS(ON) = 10.2mΩ @ VGS = 4.5V @ ID = 11.4A
  • 高性能沟道技术可实现极低的RDS(on)
  • 低栅极电荷
  • 高功率和高电流处理能力
  • RoHS Compliant

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS8876

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

30

8.2

N-Channel

Single

20

2.5

12.5

2.5

-

10.2

12

15

1650

Price N/A

More Details

FDS8876-F40

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

30

8.2

N-Channel

Single

20

2.5

12.5

2.5

-

10.2

12

15

1650

Price N/A

More Details

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