FDS8882

N 沟道，PowerTrench® MOSFET，30V，9A，20.0mΩ

相似产品推荐

产品

向销售发送邮件

添加至我的收藏

数据表

CAD模型

概览

FDS8882 适用于最大程度降低电源转换应用中的损耗。同时结合了硅和封装技术的发展，可提供最低的 rDS(on)，同时保持卓越的开关性能。

应用

This product is general usage and suitable for many different applications.
Notebook System Regulators
DC/DC Converters

特性

V_GS= 10V，I_D = 9 A时，最大r_DS(on) = 20.0mΩ
V_GS= 4.5 V，I_D = 8 A时，最大r_DS(on) = 22.5mΩ
高性能沟道技术可实现极低的r_DS(on)和快速开关
高功率和高电流处理能力
终端无引线且符合RoHS标准

物质成分

产品更改通知

产品列表

如需购买产品或样品，请先登录您的安森美账号。

搜寻

产品:

排序方式

Product Groups:

┗

Orderable Parts:

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS8882

Obsolete

SOIC-8

751EB

260

REEL

2500

N-Channel

Single

2.5

22.5

707

Price N/A

产品型号:

分销代理商		Stock	BUY

名字*

Please provide a first name.

姓氏*

Please provide a last name.

公司*

Please provide a company/university name.

Please provide a valid email.

企业邮箱*

国家/地区*

Please choose a country.

职位*

Please choose a job title.

电话

我们销售团队有什么能帮到您的设计吗?

Please provide a how could we help you.

我同意我所提供的信息可按照安森美隐私政策和使用条款被使用。

You have to agree with the privacy policy.

Hello, your current browser settings are preventing us from processing your submission. You can adjust your browser settings and reload the page or you can submit an email directly to inside.sales@onsemi.com

You might also try the following:

Clear your browser cookies
Try to open this page in anonymous browser window
Try a different browser
Make sure you have reliable internet connection

MOSFETs | FDS8882

N 沟道，PowerTrench® MOSFET，30V，9A，20.0mΩ

概览

产品列表

向销售发送邮件