MOSFETs | FDS8949_F085

双 N 沟道，逻辑电平，PowerTrench® MOSFET，40V，6A，29mΩ

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CAD Model

CAD模型

概览

此类 N 沟道逻辑电平 MOSFET 使用先进的 PowerTrench® 工艺生产，特别适合最大程度降低导通电阻，同时保持卓越的开关性能。此类器件适用于需要线内低功率损耗和快速开关的低压和电池供电应用。

  • 信息娱乐
  • 便携导航
  • 其他
  • 传动系
  • 安全和控制
  • 舒适与便捷
  • 人体电子
  • 车辆安全系统
  • 其他车用
  • Inverter
  • Power Supplies
  • 最大 rDS(ON) = 29 mΩ (VGS = 10 V)
  • 最大rDS(ON) = 36mΩ @VGS = 4.5V
  • 低栅极电荷
  • 高性能沟道技术可实现极低的 rDS(ON)
  • 高功率和高电流处理能力
  • 符合 AEC Q101 标准
  • 符合 RoHS 标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS8949-F085

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Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

40

Q1=Q2=29

N-Channel

Dual

±20

3

6

2

-

Q1=Q2=36

-

7.7

715

Price N/A

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