MOSFETs | FDS8958A

双 N 和 P 沟道 PowerTrench® MOSFET 30V

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CAD Model

CAD模型

概览

此类双 N 和 P 沟道增强型电场效应晶体管是使用先进的 PowerTrench 工艺生产的，特别适用于最大程度降低导通电阻，同时保持出色的开关性能。此类器件非常适用于要求线内低功率损耗和快速开关的低电压和电池供电应用。

  • This product is general usage and suitable for many different applications.
  • Q1： N沟道7.0A，30V
    RDS(ON) =0.028 Ω @ VGS =10 V
    RDS(ON)=0.040 Ω @ VGS = 4.5 V
  • Q2： P沟道-5A，-30V
    RDS(ON) = 0.052 Ω @ VGS = -10 V
    RDS(ON) = 0.080 Ω @ VGS = -4.5 V
  • 快速开关速度
  • 高功率和处理能力，采用广泛使用的表面贴装封装

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS8958A

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Lifetime

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

±30

N: 28.0 , P: 52.0

Complementary

Dual

±20

± 3.0

N: 7.0, P: 5.0

2

-

N: 40.0 , N: 80.0

-

N: 11.5, P:9.6

N: 575, Q2:528

$0.2975

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