MOSFETs | FDS8958A_F085

双 N 和 P 沟道 PowerTrench® MOSFET 30V

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概览

此类双 N 和 P 沟道增强型电场效应晶体管是使用先进的 PowerTrench 工艺生产的，特别适用于最大程度降低导通电阻，同时保持出色的开关性能。这些器件适用于需要线内低功率损耗和快速开关的低电压和电池供电应用。

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  • 信息娱乐
  • 其他
  • 传动系
  • 安全和控制
  • 舒适与便捷
  • 人体电子
  • 车辆安全系统
  • 其他车用
  • Q1：N沟道
  • 7.0 A、30 V、RDS(ON) = 0.040Ω(VGS = 4.5 V) Q2：P-沟道
  • 快速开关速度
  • 采用广泛使用的表面贴装封装，具有高功率和高电流处理能力
  • 符合 AEC Q101 标准
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS8958A-F085

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Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

±30

N: 28, P: 52

Complementary

Dual

20

±3

N: 7.0, P: 5.0

2

-

N: 40, P: 80

-

9.6

N: 575, Q2:528

Price N/A

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