FDT459N

N 沟道增强型场效应晶体管，30V，6.5A，35mΩ

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CAD模型

概览

此类 N 沟道增强型功率场效应晶体管是使用高单元密度的 DMOS 专属工艺生产的。这种极高密度工艺特别适用于最大程度降低导通电阻，可提供卓越的开关性能。这些产品适用于笔记本电脑功率管理、电池供电电路和直流电机控制等低电压、低电流应用。

应用

This product is general usage and suitable for many different applications.

特性

6.5 A，30 V。 R_DS(ON) = 0.035 Ω @ V_GS = 10 V
R_DS(ON) = 0.055 Ω @ V_GS = 4.5 V
高密度设计可实现极低的R_DS(ON)
高功率和高电流处理能力，采用广泛使用的表面贴装封装

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDT459N

Obsolete

SOT-223-4 / TO-261-4

318H-01

260

REEL

4000

N-Channel

Single

6.5

365

Price N/A

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MOSFETs | FDT459N

N 沟道增强型场效应晶体管，30V，6.5A，35mΩ

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