MOSFETs | FDV302P

数字 FET，P 沟道，-25V，-0.12A，10Ω

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概览

此 P 沟道逻辑电平增强型场效应晶体管是使用高单元密度的 DMOS 专属技术生产的。这种极高密度工艺特别适用于最大程度降低导通电阻。此器件是专为在低压应用中替代数字晶体管而设计的。因为无需偏置电阻，所以此单 P 沟道 FET 可以替代若干具有各种偏置电阻的数字晶体管，如 DTCx 和 DCDx 系列。

  • This product is general usage and suitable for many different applications.
  • -25V、-0.12A（连续值）、-0.5A（峰值） RDS(ON) = 13 Ω @ VGS= -2.7 V、RDS(ON) = 10 Ω @ VGS = -4.5 V。
  • 栅极驱动电平要求极低，从而可在3V电路中直接运行。 VGS(th) < 1.5V。
  • 栅-源齐纳二极管增强耐静电放电(ESD)能力。 >6kV人体模型。
  • 紧凑型工业标准SOT-23表面贴装封装。
  • 用一个DMOS FET替代多个PNP数字晶体管（DTCx和DCDx）。

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDV302P

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Last Shipments

CAD Model

Pb

A

H

P

SOT-23 (TO-236)

318

1

260

REEL

3000

N

-25

-

P-Channel

Single

-8

-1.5

-0.12

0.35

13000

10000

1.1

0.22

11

Price N/A

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