MOSFETs | FDZ1416NZ

共漏极，N 沟道 2.5 V PowerTrench® WL-CSP MOSFET 24V，7A，23mΩ

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概览

此器件专门设计为锂电子电池组保护电路和其他超便携应用中的单封装方案。它具有两个共漏极 N 沟道 MOSFET，可实现双向电流流向，基于先进的 PowerTrench® 工艺以及“低间距”WLCSP 封装工艺，FDZ1416NZ 可最大程度减小 PCB 空间和 rS1S2(on)。这种先进的 WLCSP MOSFET 体现了封装技术的突破，使得该器件能够将优异的传热特性、超小型封装、低门极电荷和低 rS1S2(on) 等诸多性能结合在一起。

  • 手机
  • Battery Management
  • Load Switch
  • Battery Protection
  • VGS = 4.5 V，ID = 1 A时，最大rS1S2(on) = 23mΩ
  • VGS = 4 V，ID = 1 A时，最大rS1S2(on) = 25mΩ
  • VGS = 3.1 V，ID = 1 A时，最大rS1S2(on) = 28mΩ
  • VGS = 2.5 V，ID = 1 A时，最大rS1S2(on) = 33mΩ
  • 只占用2.2 mm2的PCB面积
  • 超薄封装： 安装至PCB时，高度小于0.35 mm
  • 高功率和高电流处理能力
  • HBM静电放电保护等级为>3.2kV（注3）
  • 符合RoHS标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDZ1416NZ

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Last Shipments

CAD Model

Pb

A

H

P

WLCSP-4

567RD

1

260

REEL

5000

N

24

-

N-Channel

Dual Common Drain

12

1.3

7

1.7

Q1=Q2=33

Q1=Q2=23

-

12

1140

Price N/A

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