MOSFETs | FQA38N30

N 沟道 QFET® MOSFET 300 V，38.4 A，85 mΩ

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此类 N 沟道增强型电场效应晶体管是使用安森美半导体的平面条纹和 DMOS 专属技术生产的。此先进技术特别适用于最大程度降低导通电阻，提供出色的开关性能，可承受雪崩和换相模式下的高能量脉冲。这些器件非常适用于高效开关模式电源、功率因数校正、基于半桥的电子灯镇流器。

  • 38.4 A、300 V、RDS(on) = 85 mΩ（最大值）（VGS = 10 V、ID = 19.2 A）
  • 低栅极电荷（典型值 90 nC)
  • 低 Crss（典型值 70 pF)
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQA38N30

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Last Shipments

CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

300

85

N-Channel

Single

5

5

38.4

290

-

-

-

90

3380

Price N/A

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