MOSFETs | FQA62N25C

功率 MOSFET，N 沟道，QFET®，250 V，62 A，35 mΩ，TO-3P

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概览

此 N 沟道增强型功率 MOSFET 是使用平面条纹和 DMOS 专属技术生产的。此先进 MOSFET 技术适用于降低导通电阻，提供卓越的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、有源功率系数校正 (PFC) 和电子灯镇流器。

  • 其他音频与视频
  • Switched Mode Power Supplies
  • Active Power Factor Correction (PFC)
  • Electronic Lamp Ballasts
  • 62A, 250V, RDS(on) = 35mΩ（最大值）@VGS = 10 V, ID = 31A栅极电荷低（典型值：100nC)
  • 低 Crss（典型值63.5pF)
  • 100% 经过雪崩击穿测试
  • 100% Avalanche Tested

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQA62N25C

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Last Shipments

CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

250

35

N-Channel

Single

±30

4

62

298

-

-

-

100

4830

Price N/A

More Details

FQA62N25CPWD

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Obsolete

CAD Model

Pb

A

H

P

E-PKG AXIAL-LEADED GLASS DIODE

017AE

NA

-

RAIL

1

N

250

35

N-Channel

Single

±30

4

62

298

-

-

-

100

4830

Price N/A

More Details

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