MOSFETs | FQA90N15_F109

N 沟道 QFET® MOSFET 150V，90A，18mΩ

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该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。

  • AC-DC商用电源-服务器和工作站
  • 工作站
  • 服务器和大型机
  • 台式计算机
  • AC-DC商用电源-台式计算机
  • 90A, 150V, RDS(on) = 18mΩ（最大值）@VGS = 10 V, ID = 45A栅极电荷低（典型值：220nC)
  • 低 Crss（典型值200pF)
  • 100% 经过雪崩击穿测试
  • 175°C最大结温额定值"
  • 175°C maximum junction temperature rating

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQA90N15-F109

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Last Shipments

CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

150

18

N-Channel

Single

±25

4

90

375

-

-

-

220

6700

Price N/A

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