MOSFETs | FQB10N50CFTM

N 沟道 QFET® FRFET® MOSFET

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该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。 这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。 这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。

  • Switched Mode Power Supplies
  • Active Power Factor correction (PFC)
  • Electronic Lamp Ballasts
  • 10 A、500 V、RDS(on) = 610 mΩ（最大值）（VGS = 10 V、ID = 5 A）栅极电荷低（典型值： 45 nC）
  • 低 Crss（典型值 17.5 pF）
  • 100%经过雪崩击穿测试
  • 快速恢复体二极管
  • Fast recovery body diode

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQB10N50CFTM-WS

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Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

N

500

610

N-Channel

Single

4

4

10

143

-

-

-

45

1660

Price N/A

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