MOSFETs | FQB22P10TM_F085

100V，P 沟道，QFET®，-22A，125mΩ

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概览

此类 P 沟道 MOSFET 增强型电场效应晶体管是使用安森美半导体的平面条纹 DMOS 专属工艺生产的。此先进技术特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件非常适用于低压应用，如音频放大器、高效开关 DC/DC 转换器和直流电机控制。

  • 传动系
  • -22 A、-100 V、RDS(on) = 0.125Ω (VGS = -10 V)
  • 低栅极电荷（典型值40 nC）
  • 低Crss（典型值160pF）
  • 快速开关
  • 100% 经过雪崩击穿测试
  • 提高了 dv/dt 性能
  • 175°C最大结温额定值
  • 符合 AEC Q101 标准
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQB22P10TM-F085

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Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

N

-100

125

P-Channel

Single

±30

-4

-22

125

-

-

-

40

1170

Price N/A

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