MOSFETs | FQB9P25

P 沟道 QFET® MOSFET -250 V，-9.4 A，620 mΩ

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此类 P 沟道增强型电场效应晶体管是使用平面条纹 DMOS 专属技术生产的。此先进技术特别适用于最大程度降低导通电阻，提供出色的开关性能，可承受雪崩和换相模式下的高能量脉冲。这些器件非常适合高能效开关 DC/DC 转换器。

  • -9.4 A、-250 V、RDS(on) = 620 mΩ（最大值）@ VGS = -10 V、ID = -4.7 A
  • 低栅极电荷（典型值 29 nC)
  • 低 Crss（典型值 27 pF)
  • 100% 经过雪崩击穿测试

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQB9P25TM

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Last Shipments

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

N

-250

620

P-Channel

Single

-5

-5

-9.4

120

-

-

-

29

910

Price N/A

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