MOSFETs | FQD12P10TM-F085

Power MOSFET, Single P-Channel, -100 V, 290 mΩ, -9.4 A

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This P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

  • Audio Amplifiers
  • High Frequency Switching DC/DC Converters
  • DC Motor Control
  • Motor Control – EPS, Wipers, Fans, Seats, etc.
  • Load Switch – ECU, Chassis, Body
  • Low Gate Charge
  • Improved dV/dT capability
  • AECQ-101 Qualified
  • RoHS compliant

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Case Outline

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MSL Temp (°C)

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Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQD12P10TM-F085

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Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

-100

290

P-Channel

Single

±30

-4

-9.4

2.5

~NA~

~NA~

~NA~

21

620

Price N/A

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